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S3C2440AL-40YQ8O(Samsung semiconductor)
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Product Details
D/C: | 2014+ | Model Number: | S3C2440AL-40YQ8O(Samsung semiconductor) | Type: | Other, memory |
Brand Name: | Samsung semiconductor | Place of Origin: | Gyeongsangnam-do, South Korea |
Product Description
Specifications
1.hot sale S3C2440AL-40YQ8O(Samsung)2.New&Original
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4.In stock,Fast delivery
Product Description
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Samsung Electronics' New NFC Chip with Embedded Flash Offers Increased RF Performance in a Small Package
Samsung Electronics Co., Ltd., a world leader in advanced semiconductor solutions, today introduced its new near field communication (NFC) chip, the S3FWRN5, which features high radio frequency (RF) performance and small package size. The S3FWRN5's RF performance doubles the range in both reader and card emulation modes, when compared to that of its predecessor, the S3FNRN3.
"With each new generation of mobile devices, including smartphones, designers are challenged to develop products that provide greater convenience to users and keep them more connected," said Dr. Kyushik Hong, Vice President of Marketing, System LSI Business, Samsung Electronics. "To assist with those parameters, Samsung will continue to offer advanced NFC technology solutions to those tasked with developing exciting, next-generation mobile devices."
With a mere package size of 2.4mm x 2.4mm, the industry’s smallest for stand-alone NFC IC's, the new NFC IC offers mobile device designers a more flexible and efficient printed circuit board (PCB) layout. For smartphone manufacturers, the chip's pin-to-pin compatibility also allows convenient application as a stand-alone NFC IC or NFC System-in-Package (SiP) with embedded secure element (eSE).
As the industry's only NFC IC built using a 45nm e-Flash process, the S3FWRN5 allows easy and secure firmware updates without having to redesign the architecture. The e-Flash portion can be safely modified through firmware updates, when new features need to be added to the chip. This enables mobile device makers to reduce the development time in comparison to solutions based on read-only memory (ROM).
The S3FWRN5 is also equipped with Samsung's low power sensing (LPS) technology, a newly optimized algorithm to sense the signals at the lowest possible level of power consumption. The technology minimizes the NFC IC's energy consumption, when it sends out continuous signals to recognize other NFC-enabled devices or NFC tags. By adopting LPS technology, the chip's power requirements are reduced by approximately 25 percent when compared to Samsung's most recent NFC product.
Based on its compelling RF performance, this new NFC solution has obtained several NFC certifications across the world, which were awarded by reputable organizations, such as Europay, MasterCard and Visa (EMV), China UnionPay, China Mobile Communication Corporation (CMCC) and the NFC Forum, and is universally compatible with contactless NFC readers and NFC tags globally.
Samsung started mass producing the 45nm e-Flash NFC IC during the second half of 2014. The NFC IC is featured in the latest Samsung flagship smartphone, the Galaxy Note 4. Samsung will continue to expand the application of this NFC solution in the global market.
Samsung Electronics Starts Mass Production of Industry First 3-bit 3D V-NAND Flash Memory
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 3-bit multi-level-cell (MLC) three-dimensional (3D) Vertical NAND (V-NAND) flash memory for use in solid state drives (SSDs).
“With the addition of a whole new line of high density SSDs that is both performance- and value-driven, we believe the 3-bit V-NAND will accelerate the transition of data storage devices from hard disk drives to SSDs," said Jaesoo Han, Senior Vice President, Memory Sales & Marketing, Samsung Electronics. "The wider variety of SSDs will increase our product competitiveness as we further expand our rapidly growing SSD business."
The 3-bit V-NAND is Samsung's latest second generation V-NAND device, which utilizes 32 vertically stacked cell layers per NAND memory chip. Each chip provides 128 gigabits (Gb) of memory storage.
In Samsung's V-NAND chip structure, each cell is electrically connected to a non-conductive layer using charge trap flash (CTF) technology. Each cell array is vertically stacked on top of one another to form multibillion-cell chips.
The use of 3 bit-per-cell, 32-layer vertically stacked cell arrays sharply raises the efficiency of memory production. Compared to Samsung’s 10 nanometer-class* 3-bit planar NAND flash, the new 3-bit V-NAND has more than doubled wafer productivity.
Samsung introduced its first generation V-NAND (24 layer cells) in August 2013, and introduced its second generation V-NAND (32-layer) cell array structure in May 2014. With the launch of the 32-layer, 3-bit V-NAND, Samsung is leading the 3D memory era by speeding up the evolution of V-NAND production technology.
After having first produced SSDs based on 3-bit planar NAND flash in 2012, Samsung has proven that there is indeed a mass market for high-density 3-bit NAND SSDs.
The industry's first 3-bit 3D V-NAND will considerably expand market adoption of V-NAND memory, to SSDs suitable for general PC users, in addition to efficiently addressing the high-endurance storage needs of most servers today.
DRAM
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Home -Product -Mobile Memory
Mobile Memory
Mobile DRAM and Multi-Chip Packages (MCPs)
SamsungMobile memory enables outstanding design flexibility. Mobile DRAM solutions help designers create sleek devices with heightened functionality. And, innovative "chip-stack" MCP solutions optimize board space by combining different memory technologies on a single substrate.
- ordering info : see below for part no. speed suffix
- K4XXXXXXX-[Suffix]
1. temperature
2. speed for Mobile-SDRAM
Part No. Suffix | Description |
C3 | 133MHz, CL3 |
C6 | 166MHz, CL3 |
C8 | 200MHz, CL3 |
CA | 111MHz, CL3 |
ICC1 @ Max.frequency, CL33. mobile function
- PASR : Partial Array Self Refresh
- TCSR : Temperature Compensated Self Refresh
- DS : Drive Strength Control
4. current
- ICC6 @ Low, Full Bank, 85°C / 70°C
5. lead-free & halogen-free package
- K4XXXXXXXX-XXXXX (Xth code represents a package)
2 : 90FBGA (DDP)
3 : 90FBGA (lead-free & halogen-free, DDP)
4 : 96FBGA
5 : 96FBGA (lead-free & halogen-free)
7 : 90FBGA
8 : 90FBGA (lead-free & halogen-free)
A : 168FBGA (lead-free, halogen-free, DDP)
F : 60FBGA (lead-free & halogen-free)
M : 152FBGA (lead-free & halogen-free, POP)
N : 168FBGA (lead-free & halogen-free, POP)
P : 60FBGA (lead-free & halogen-free, DDP)
Y : 60FBGA (DDP)
Mobile DRAM
High-speed, power-saving memory for the next generation of mobile devices
Find out why leading manufacturers utilize Mobile DRAM for eBooks, tablet computers, smart phones, MP3s, and PDAs. Deliver the features you need to confidently meet market demand for handheld devices with high-performance memory built specifically for the leading edge of mobile device and application design.
Gain exceptional design advantages
Benefits of using Mobile DRAM in computing, consumer, and communication devices include:
- Reduced power consumption in standby mode enabled by advanced, on-chip technologies such as temperature-compensated self-refresh (TCSR)
- Extended battery life in operational mode with power consumption as low as 1.2V
- High operational speeds that keep pace with today´s fast mobile CPUs and large displays, enabling users to power through demanding applications and multitasking
- Design flexibility with a choice of thin, small form-factor packages that occupy very little board space
Realize outstanding power savings
Boost battery life with new generations of Samsungmobile memory:
- Samsungis introducing the world´s first 30-nm class LPDDR3 for high peak bandwidth and outstanding energy efficiency
- Samsungs’ 20-nm class LPDDR2 is designed to deliver significant power savings compared to the previous-generation LPDDR1 - while heightening performance to bring full, high-definition viewing to virtually any mobile device.
- Gain additional power savings by moving from a dual-die package to a monolithic chip, keeping the same total density, enabling an overall improvement of up to 70 percent in power efficiency at the component level.
Our LPDDR2 and LPDDR3 are designed to extend the life of a seven-hour battery by about 45 minutes during typical mobile operation. For standby power, the savings are even more dramatic. For example, Samsungs LPDDR2 or LPDDR3 can add up to three days of standby battery life for a smart phone, which is a 23 percent improvement over LPDDR1 - from 12.5 to 15.4 days.
MCP
Samsung Multi-Chip Packages
Innovative "chip-stack" design optimizes board space
Find out why leading manufacturers choose SamsungMulti-Chip Packages (MCPs) for applications where board space is extremely limited, such as smartphones and other mobile handsets, tablets, and multimedia players. MCP memory configurations are designed to support a growing list of device capabilities, expanding freedom and choice for users who want to do more with their mobile applications.
Unify memory technologies on a single substrate
SamsungMCPs combine different memory technologies, including single-level cell (SLC) NAND flash or eMMC and Mobile DRAM such as LPDDR1 (low-power DDR1) and LPDDR2 on a single substrate. This flexible approach is designed to deliver benefits including:
- Enhanced memory and overall system performance through tight coupling and close positioning of memory modules to establish the shortest interconnections possible in a small, high-density package
- Average 30 percent to 40 percent savings in board space for your end product through the stacking of several memory chips in a vertical configuration
- Minimized bill-of-materials count for simplified manufacturing and cost savings
- Accelerated time to market through rapid integration of MCP modules, speeding the pace of product development
The broad Samsung MCP portfolio includes a myriad of memory configurations, primarily with 2-, 3-, or 4-die packages. The most popular combinations are 1Gb+512Mb; 2Gb+1Gb; 4Gb+2Gb (NAND and Mobile DRAM); as well as new eMMC-based MCP (eMCP) combos such as 4GB eMMC + 4Gb MDDR, and 32GB eMMC + 8Gb LPDDR2. The newest-generation eMCP modules are designed to contain a combination of the fastest eMMC (embedded multimedia card), along with either MDDR or LPDDR2 memory.
Manufacturer Part Number: |
S3C2440AL-40YQ8O(Samsung semiconductor) |
Manufacturer / Brand: | Original Brand |
Quantity Available: | 2001(contact us to confirm the available quantity) |
Unit Price: | Contact us |
D/C (Date Code): | Generally newest 2014+ |
Lead Time (Delivery Time): | IN STOCK, Fast delivery |
Condition: | NEW AND UNUSED, ORIGINAL FACTORY PACKING |
Package / Case: |
|
Packaging: | Factory sealed packing |
SPQ (Standard Package Quantity): | Contact us |
MOQ: | 20Piece |
Datasheet Download: | Contact us Contact: winwin-ke@hotmail TradeManager:winchips /skype:win-chips |
Factory sealed packing,and sended in the following types: Tube, Tray, Tape and Reel, Bulk packing, Bag, etc. Please kindly confirm with your sales if you need any other assistant or demand.
Delivery time:
The goods will be shipped within 1-2 working days after confirming buyer’s payment. If you are in urgent need, we will arrange the shipment on the very day.
Shipment:
1.If you don’t have a account with any courier, we will arrange shippment and prepay the shipping cost here.
2.The item you order will be sent by DHL, UPS, FedEX, TNT and etc. If you prefer any other shipping ways, please tell us and we will check whether it is available. We will ensure the lowest shipment cost.
- if your address is remote area , you need to pay the extra charge of DHL $USD35,other wise we will send the package by EMS.Hope your kindness understanding .Thanks!
- for the customs value , if you have special requirements ,pls let us know . otherwise we will do it as our regulation (usually $USD10-20)
Tracking:
When our colleague sell your parts out. The tracking number will be e-mail to you immediately. Please confirm the receipt of the products if you receive the parcel.
Quality Control:
Before each shippment, our every product must be examined. If it fail to pass our internal inspection, we will inform you at the right time.
Refund&Replacement:
If some of the items you received aren’t in exact conform with your requirs. We would still responsibly arrange your refund and replacement. The return items must remain their original condition as same as what we sent to you.
- Pls contact us within warranty period(1 months ). Warranty doesn’t include any man-made damage
Others:
Any other request, please feel free to contact with our salesman.
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Contact Us
- Shenzhen Pcxy Technology Co., Limited
- Contact nameLily ke
- Phone86-0754-13714045673
- AddressI Room,18/F,D Building,Huaqiang plaza,Huaqiang North Road,Futian District,Shenzhen Shenzhen,Guangdong
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